Перегляд за автором "Dan'ko, V.A."

Сортувати за: Порядок: Результатів:

  • Indutnyy, I.Z.; Lysenko, V.S.; Min'ko, V.I.; Nazarov, A.N.; Tkachenko, A.S.; Shepeliavyi, P.E.; Dan'ko, V.A.; Maidanchuk, I.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Effect of hydrogen radiofrequency plasma and chemical treatment on photoluminescence (PL) spectra of SiOx layers containing Si nanoparticles are investigated. Considerable PL intensity growth in the samples containing Si ...
  • Indutnyy, I.Z.; Lisovskyy, I.P.; Mazunov, D.O.; Shepeliavyi, P.E.; Rudko, G.Yu.; Dan'ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, ...
  • Min'ko, V.I.; Shepeliavyi, P.E.; Dan'ko, V.A.; Romanenko, P.F.; Litvin, O.S.; Indutnyy, I.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching ...